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IRFR/U3711ZPbF
Static @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV DSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
V GS = 0V, I D = 250μA
?Β V DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
13
–––
mV/°C Reference to 25°C, I D = 1mA
R DS(on)
Static Drain-to-Source On-Resistance
–––
4.5
5.7
m ?
V GS = 10V, I D = 15A
–––
6.2
7.8
V GS = 4.5V, I D = 12A
V GS(th)
? V GS(th) / ? T J
I DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.55
–––
–––
2.0
-5.4
–––
2.45
–––
1.0
V
mV/°C
μA
V DS = V GS , I D = 250μA
V DS = 16V, V GS = 0V
–––
–––
150
V DS = 16V, V GS = 0V, T J = 125°C
I GSS
gfs
Q g
Q gs1
Q gs2
Q gd
Q godr
Q sw
Q oss
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q gs2 + Q gd )
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
48
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
18
5.1
1.8
6.5
4.6
8.3
9.8
12
13
15
5.2
2160
700
360
100
-100
–––
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nA
S
nC
nC
ns
pF
V GS = 20V
V GS = -20V
V DS = 10V, I D = 12A
V DS = 10V
V GS = 4.5V
I D = 12A
See Fig. 16
V DS = 10V, V GS = 0V
V DD = 15V, V GS = 4.5V
I D = 12A
Clamped Inductive Load
V GS = 0V
V DS = 10V
? = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
Max.
Units
E AS
I AR
E AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
–––
–––
–––
140
12
7.9
mJ
A
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
Continuous Source Current
–––
–––
93
MOSFET symbol
(Body Diode)
A
showing the
I SM
Pulsed Source Current
–––
–––
370
integral reverse
(Body Diode)
p-n junction diode.
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
19
9.4
1.0
28
14
V
ns
nC
T J = 25°C, I S = 12A, V GS = 0V
T J = 25°C, I F = 12A, V DD = 10V
di/dt = 100A/μs
t on
2
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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